Experimental study on real-time measurement of single-event effects of 14 nm FinFET and 28 nm planar CMOS SRAMs based on the Qinghai-Tibet Plateau

Based on the Yangbajing International Cosmic Ray Observatory in Lhasa with an altitude of 4300 m, a long-term real-time experiment is carried out order to measure atmospheric radiation induced soft errors 14 nm FinFET and 28 planar CMOS SRAM array. The underlying mechanisms are also revealed. Five boards used test, four which equipped 28-nm process devices, one board 14-nm devices. After removing unstable bad bits, actual effective test capacity 7.1 Gb. During on-board FPGA reads stored contents all tested devices real time, reports error information (occurrence number, column device address, data) corrects error. duration 6651 h. A total 56 single event upset (SEU) events observed, they being 24 bit (SBU) 32 Multiple Cell Upset (MCU) events. previous results 65-nm SRAM, study finds that SER continues decrease reduction size, but proportion MCU (57%) exceeds SBU, “maximum point” sensitivity, maximum size 16 bits. Although Fin spacing only about 35 nm, critical charge decreases sub-fC, introduction structure leads change collection sensitive volume sharing mechanism , shallow trench isolation narrowing diffusion channel. On other hand, surface area 0.0024 μm<sup>2</sup>, resulting significant rate both SBU process.